K9F2G08U0M-PCB0 M x 8 Bit NAND Flash Memory | Business, Office & Industrial, Electrical Equipment & Supplies, Electronic Components. K9F2G08U0M-PCB0 M x 8 Bit NAND Flash Memory | Business & Industrial, Electrical Equipment & Supplies, Electronic Components & Semiconductors. SAMSUNG K9F2G08U0M-PCB0: M X 8 BIT / M X 16 BIT NAND FLASH MEMORY.

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Add the data protection Vcc guidence for 1. Page 35 Draft Date Sep. VIL can undershoot to Pb-free Package is added. The definition and value of setup and hold time are changed. Added addressing method for program operation 0. Unique ID for Copyright Protection?

Its NAND cell provides the most costeffective solution for the solid state mass storage market. A program operation can be performed in typical ? Data in the data page can be read out at 50ns 30ns, only X8 device cycle time per byte or word X16 device.

The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. The K9F2GXXX0M is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility. C Vcc Vss N. When the device is in the Busy state, CE high is ignored, and the device does not return to standby mode in program or erase operation.

Data is valid tREA after the falling edge of RE which also increments the internal column address counter by one.

Commands, address and data are latched on the rising edge of the WE pulse. The internal high voltage generator is reset when the WP pin is active low.

When low, it indicates that a program, erase or random read operation is in process and returns to high state upon completion. It is an open drain output and does not float to high-z condition when the chip is deselected or when outputs are disabled.

The power-on auto-read is enabled when PRE pin is tied to Vcc. Starting Address of the Register. A byte X8 device or word X16 device data register and a byte X8 device or word X16 device cache register are serially connected to each other.

The memory array is made up of 32 cells that are serially connected to form a NAND structure. Each of the 32 cells resides in a different page. A block consists of two NAND structured strings. A NAND structure k9d2g08u0m of 32 cells. Total 1, NAND cells reside in a block. The program and read operations are executed on a page basis, while the erase operation is executed on a block basis. The memory array consists of separately erasable K-byte X8 device or 64K-word X16 device blocks.

This scheme dramatically reduces pin counts and allows system upgrades to future densities by maintaining consistency in system board ,9f2g08u0m. Those are latched on the rising edge of WE.

Some commands require one bus cycle. Some other commands, like page read and block erase and page program, require two cycles: The M byte X8 device or M word X16 device physical space requires 29 X8 or 28 X16 addresses, thereby requiring five cycles for addressing: K9r2g08u0m Read and Page Program need the same five address cycles following the required command input.

In Block Erase operation, however, only the three row address cycles are used. Device operations are selected k9f20g8u0m writing specific commands into the command register.


2pcs K9F2G08U0M-PCB0 K9F2G08 K9F2G08U0M

The device provides cache program in a block. It is possible to write data into the cache registers while data stored in data registers are being programmed into memory cells in cache program mode. The program performance may be dramatically improved by cache program when there are lots of pages of data to k9f2g08u0n programmed.

The device embodies k9f2g0u0m auto-read feature which enables serial access of data of the 1st page without command and address input after power-on. In addition to the k9v2g08u0m architecture and interface, the device incorporates copy-back program feature from one page to another page without need for transporting the data to and from the external buffer memory.

Since the time-consuming serial access and data-input cycles are removed, system performance for solid-state disk application is significantly increased. Cycle 00h 00h 90h FFh 80h 80h 85h 60h 85h 05h 70h 2nd. Any undefined command inputs are prohibited except for above command set of Table 1. Minimum DC voltage is During transitions, this level may undershoot to Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet.

Exposure to absolute maximum rating conditions for extended periods may affect reliability. The device may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks is presented with both cases of invalid blocks considered.

Invalid blocks are defined as blocks that contain one k9f2g080m more bad bits. Do not erase or program factory-marked bad blocks. Refer to the attached technical notes for appropriate management of invalid blocks. If reset command FFh is written at Ready state, the device goes into Busy for maximum 5us. The information regarding the invalid block s is so called as the invalid block information.

Devices with invalid block s have the same quality level as devices with all valid blocks and have the same AC and DC characteristics. An invalid block s does not affect the performance of valid block s because it is isolated from the bit line and the common source line by a select transistor.


The system design must be able to mask out the invalid block s via address mapping. The invalid block s status is defined by the 1st byte X8 device or 1st word X16 device in the spare area. Since the invalid block information is also erasable in most cases, it is impossible to recover the information once it has been erased.

Therefore, the system must be able to recognize the invalid block s based on the original invalid block information and create the invalid block table via the following suggested flow chart Figure 3.

Any intentional erasure of the original invalid block information is prohibited. Yes End Figure 3. Flow chart to create invalid block table. Refer to the qualification report for the actual data. The following possible failure modes should be considered to implement a highly reliable system.

In the case of status read failure after erase or program, block replacement should be done. Because program status fail during a page program does not affect the data of the other pages in the same block, block replacement can be executed with a page-sized buffer by finding an erased empty block and reprogramming the current target data and copying the rest of the replaced block.

To improve the efficiency of memory space, it is recommended that the read or verification failure due to single bit error be reclaimed by ECC without any block replacement. The said additional block failure rate does not include those reclaimed blocks.


If program operation results in an error, map out the block including the page in error and copy the target data to another block.

If erase operation results in an error, map out the failing block and replace it with another block. Buffer memory of the controller. Random page address programming is prohibited. Data 1 Data 64 Ex. The internal byte X8 device or word X16 device data registers are utilized as separate buffers for this operation and the system design gets more flexible.

In addition, for voice or audio applications which use slow cycle time on the order of u-seconds, de-activating CE during the data-loading and serial access would provide significant savings in power consumption. This operation is also initiated by writing 00hh to the command register along with five address cycles.

Once the command is latched, it does not need to be written for the following page read operation. Two types of operations are available: The random read mode is enabled when the page address is changed.

The bytes X8 device or words X16 device of data within the selected page are transferred to the data registers in less than 25?

Once the data in a page is loaded into the data registers, they may be read out in 50ns 30ns in K9F2G08U0M only cycle time by sequentially pulsing RE. The repetitive high to low transitions of the RE clock make the device output the data starting from the selected column address up to the last column address.

The device may output random data in a page instead of the consecutive sequential data by writing random data output command.

The column address of next data, which i9f2g08u0m going to be out, may be changed to the address which follows random data output command.

Random data output can be operated multiple times regardless of how many times it is done in a page. The number of consecutive partial page programming operation within the same page without an intervening erase operation must not exceed 4 times for main array X8 device: The addressing should be k9f20g8u0m in sequential order in a block. A page program cycle consists of a serial data loading period in which up to bytes X8 device or words X16 device of data may be loaded into k9f2g08u0j data register, followed by a non-volatile programming period where the loaded data is programmed into the appropriate cell.

The serial data loading period begins by inputting k9fg08u0m Serial Data Input command 80hfollowed by the five cycle address inputs and then serial data loading. The words other than those to be programmed do not kf2g08u0m to be loaded. The device supports random data input in a page.

The column address for the next data, which will be entered, may be changed to the address which follows random data input command 85h. Random data input may be operated multiple times regardless of how many times it is done in a page.

The Page Program confirm command 10h initiates the programming process. Writing 10h alone without previously entering the serial data will not initiate the programming process.